PART |
Description |
Maker |
TC58NVG0S3AFT00 |
1 GBit CMOS NAND EPROM
|
Toshiba
|
NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
TH58NVG5S0FTA20 |
32 GBIT (4G × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
TC58NVG2S3ETA00 |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
TC58V64DC |
16M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面1.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
TC58V16BFT |
16M-Bit CMOS NAND Flash EPROM
|
Toshiba Semiconductor
|
H27U1G8F2B |
1 Gbit (128 M x 8 bit) NAND Flash
|
Hynix
|